Sidewall angle measurements using CD SEM

被引：14

作者：

Su, B ^{[1
]}

Pan, T ^{[1
]}

Li, P ^{[1
]}

Chinn, J ^{[1
]}

Shi, XL ^{[1
]}

Dusa, M ^{[1
]}

机构：

[1] Appl Mat Inc, Proc Diagnost & Control Grp, Santa Clara, CA 95054 USA

来源：

ASMC 98 PROCEEDINGS - 1998 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP: THEME - SEMICONDUCTOR MANUFACTURING: MEETING THE CHALLENGES OF THE GLOBAL MARKETPLACE | 1998年

关键词：

CD-SEM; edge width; sidewall angle; AFM; metrology;

D O I：

10.1109/ASMC.1998.731568

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurement of the sidewall angles of features (line, trench or contact hole) is important for focus exposure matrix (FEM) wafers and shallow trench isolation (STI) fillings. Cross section SEM (Scanning Electron Microscope), tilted stage inspection SEM and AFM (Atomic Force Microscope) are common tools to get information of sidewall angles. However, sidewall angles are not routinely determined using in-line metrology tools like CD (Critical Dimension) SEM. In this study, we use CD SEM to measure feature edge widths (EW) in both FEM and Sn wafers. The sidewall angle is estimated from known feature height (resist thickness or etched trench depth) with a linear slope assumption. A flared tip AFM (Veeco SXM) or a cross section SEM (X-SEM) is used as a reference to check CD SEM performance on sidewall angle measurements. We find that for sidewall angles less than 88 degrees, CD SEM measurements match reference tool measurements on sidewall angle well. The limitations of CD SEM on sidewall angle measurement are also discussed.

引用

页码：259 / 261

页数：3