Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy

被引：32

作者：

Akatsuka, Yasuto ^{[1
]}

Iwayama, Sho ^{[1
]}

Takeuchi, Tetsuya ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Akasaki, Isamu ^{[1
,2
]}

机构：

[1] Meijo Univ, Dept Mat Sci, Tempaku Ku, 1-501 Shiogamaguchi, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ, Akasaki Res Ctr, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648601, Japan

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 02期

关键词：

LIGHT-EMITTING-DIODES;

D O I：

10.7567/1882-0786/aafca8

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have systematically investigated acceptor (Mg) and donor (Si) profiles at GaN tunnel junction interfaces with the aim of a low resistivity under reverse bias. We found that an overlap between Mg and Si at the tunnel junction interface was effective in helping to obtain a lower resistivity of the GaN tunnel junctions, which contradicts the typical picture of conventional semiconductor-based tunnel junctions. We demonstrated a LED with the GaN tunnel junction prepared in a single growth run by metalorganic vapor phase epitaxy, showing a differential resistivity of 2.4 x 10(-4) Omega cm(2 )at 5 kA cm(-2). (C) 2019 The Japan Society of Applied Physics

引用

页数：4

共 30 条

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