The metal-insulator transition in V2O3(0001) thin films:: surface termination effects

被引:23
|
作者
Pfuner, F [1 ]
Schoiswohl, J [1 ]
Sock, M [1 ]
Surnev, S [1 ]
Ramsey, MG [1 ]
Netzer, FP [1 ]
机构
[1] Karl Franzens Univ Graz, Inst Phys Surface & Interface Phys, A-8010 Graz, Austria
关键词
D O I
10.1088/0953-8984/17/26/004
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Epitaxially grown V2O3(0001) thin films have been prepared with different surface terminations, as evidenced by atomically resolved scanning tunnelling microscopy and high-resolution electron energy loss spectroscopy (HREELS) phonon spectra. The spectral changes observed in valence band photoemission spectra and HREELS on cooling the V2O3 samples from 300 to 100 K have been associated with the metal-insulator transition (MIT) in the bulk of the V2O3 film. The reconstructed surface regions per se do not display the MIT, but affect the MIT signature observed with surface sensitive techniques, depending on the thickness of the reconstructions. Whereas the thermodynamically stable (I x 1) vanadyl V=O surface termination allows the observation in photoemission and HREELS of a clear signature of the MIT, the latter is screened on a (root 3 x root 3)R30 degrees surface formed by V=O defect structures. Doping of the (root 3 x root 3)R30 degrees surface with small amounts of adsorbed water restores reversibly the MIT spectral fingerprints. These observations are discussed in terms of the different geometrical and electronic structures of the different surface terminations.
引用
收藏
页码:4035 / 4047
页数:13
相关论文
共 50 条
  • [1] Role of Surface Termination in the Metal-Insulator Transition of V2O3(0001) Ultrathin Films
    Kundu, Asish K.
    Barman, Sukanta
    Menon, Krishnakumar S. R.
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (17) : 20779 - 20787
  • [2] Epitaxial strain effects on the metal-insulator transition in V2O3 thin films
    Yonezawa, S
    Muraoka, Y
    Ueda, Y
    Hiroi, Z
    SOLID STATE COMMUNICATIONS, 2004, 129 (04) : 245 - 248
  • [3] Metal-insulator phase transition in hydrogenated thin films of V2O3
    Andreev, V. N.
    Klimov, V. A.
    Kompan, M. E.
    PHYSICS OF THE SOLID STATE, 2017, 59 (12) : 2441 - 2443
  • [4] Evidence of the metal-insulator transition in ultrathin unstrained V2O3 thin films
    Dillemans, L.
    Smets, T.
    Lieten, R. R.
    Menghini, M.
    Su, C-Y
    Locquet, J-P
    APPLIED PHYSICS LETTERS, 2014, 104 (07)
  • [5] Tuning metal-insulator transitions in epitaxial V2O3 thin films
    Thorsteinsson, Einar B.
    Shayestehaminzadeh, Seyedmohammad
    Arnalds, Unnar B.
    APPLIED PHYSICS LETTERS, 2018, 112 (16)
  • [6] Reversible control of the metal-insulator transition in V2O3 thin films through plasma hydrogenation
    Sultan, M. T.
    Arnalds, U. B.
    PHYSICA SCRIPTA, 2022, 97 (03)
  • [7] Effect of growth conditions and buffer layers on the metal-insulator transition in V2O3 thin films
    Schuler, H
    Weissmann, G
    Renner, C
    Six, S
    Klimm, S
    Simmet, F
    Horn, S
    EPITAXIAL OXIDE THIN FILMS II, 1996, 401 : 61 - 66
  • [9] Structural precursor to the metal-insulator transition in V2O3
    Pfalzer, P
    Obermeier, G
    Klemm, M
    Horn, S
    denBoer, ML
    PHYSICAL REVIEW B, 2006, 73 (14):
  • [10] Metal-insulator transition and local structure of V2O3
    Frenkel, AI
    Stern, EA
    Chudnovsky, FA
    JOURNAL DE PHYSIQUE IV, 1997, 7 (C2): : 1061 - 1063