Fabrication of All-tube p- and n-Type Carbon Nanotube Field-Effect Transistors by the Laser Transfer Method

We report a method for fabricating all-carbon nanotubes p- and n-type field-effect transistors upon a Si substrate using a laser transfer technique that first transfers multi-walled carbon nanotube (MWNTs) film upon the Si substrate as electrodes. The single-walled carbon nanotubes (SWNTs) and polyethylene imine (PEI) mixed with SWNTs are then transferred between the MWNT electrodes as the semi-conducting layers for the designated p- and n-type field-effect transistors. This laser transfer technique is relatively simple and low-cost, and has the advantage of fabricating carbon nanotube field-effect transistors efficiently in a fixed location in the ambient environment.