Depth profiling of hydrogen and oxygen in ferroelectric films using high-energy ion beam

被引：0
|
作者：
Kaneko, T
Watamori, M
Makita, H
Araujo, C
Kano, G
机构：
[1] Kochi Univ Technol, Dept Elect & Photon Syst Engn, Kochi 7828502, Japan
[2] Kochi Univ Technol, Grad Sch, Kochi 7828502, Japan
[3] Univ Colorado, Coll Engn & Appl Sci, Colorado Springs, CO 80933 USA
来源：
INTEGRATED FERROELECTRICS | 2003年 / 53卷
关键词：
RBS; ERD; hydrogen; depth profiling; SBT;
D O I：
10.1080/10584580390258336
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A characterization technique for oxide ferroelectric materials using high-energy ion beam is presented. In this study, depth profiles of chemical elements are obtained for SBT films grown by MOD method and by MOCVD method respectively. Hydrogen depth profiles are taken by ERD technique with an Al absorber foil. Depth profiles of other elements are determined with RBS technique. For the MOD-grown sample, the elemental amount ratio was determined as Sr1.00Bi2.06 +/- 0.03Ta2.02 +/- 0.03O8.33 +/- 0.17. The oxygen deficiency in the MOD-grown SBT film was uniformly observed at every depths. For the MOCVD-sample and the MOD-sample, the underlying Pt electrode layers contained 4.7 at.% and 3.8 at.% of hydrogen respectively.
引用
收藏
页码：391 / 399
页数：9
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