Improved Crystal Quality and Surface Morphology of Nonpolar a-plane GaN Grown on r-plane Sapphire Substrates

被引:1
作者
Kim, Dong Ho [1 ]
Kim, Su Jin [1 ]
Chae, Doug Ju [1 ]
Yang, Ji Won [1 ]
Sim, Jae In [1 ]
Kim, Tae Geun [1 ]
Hwang, Sung Min [2 ]
机构
[1] Korea Univ, Sch Elect & Elect Engn, Seoul 136710, South Korea
[2] Korea Elect Technol Inst, Optoelect Lab, Songnam 463816, South Korea
关键词
Nonpolar; GaN; MOCVD; Crystallinity; Surface morphology; GALLIUM NITRIDE; FIELD; WELL;
D O I
10.3938/jkps.58.873
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this paper, we report on the improved crystal quality and surface morphology of nonpolar a-plane ([11-20]) GaN layers grown on r-plane ([1-102]) sapphire substrates by using a metal-organic chemical vapor deposition. Both the reactor pressure and the V/III ratio were modulated using two-steps during the growth in order to optimize the growth conditions for the fully coalesced GaN layers with smooth surfaces. As a result, a root-mean-square roughness of 0.678 rim was observed with atomic-force microscopy for the nonpolar a-plane GaN, and the full-widths at half-maximum values of the omega-rocking curve were 432 and 648 arcsec from the c- and the in-direction parallel scans, respectively. The low-temperature photoluminescence spectra were also investigated to identify the origin of the improvement in the crystallinity.
引用
收藏
页码:873 / 877
页数:5
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