Structural and PL properties of Cu-doped ZnO films

被引：135

作者：

Peng, Xingping ^{[1
,3
]}

Xu, Jinzhang ^{[2
]}

Zang, Hang ^{[3
]}

Wang, Boyu ^{[2
]}

Wang, Zhiguang ^{[3
]}

机构：

[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 73000, Peoples R China

[2] Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 73000, Peoples R China

[3] Chinese Acad Sci, Inst Modern Phys, Lanzhou 73000, Peoples R China

来源：

JOURNAL OF LUMINESCENCE | 2008年 / 128卷 / 03期

关键词：

ZnO films; Cu-doped; XRD; photoluminescence; RF sputtering;

D O I：

10.1016/j.jlumin.2007.07.016

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Cu-doped ZnO films with hexagonal wurtzite structure were deposited on silicon (1 1 1) substrates by radio frequency (RF) sputtering technique. An ultraviolet (UV) peak at similar to 380nm and a blue band centered at similar to 430nm were observed in the room temperature photoluminescent (PL) spectra. The UV emission peak was from the exciton transition. The blue emission band was assigned to the Zn interstitial (Zn-i) and Zn vacancy (V-Zn) level transition. A strong blue peak (similar to 435 nm) was observed in the PL spectra when the alpha(Cu) (the area ratio of Cu-chips to the Zn target) was 1.5% at 100 W, and ZnO films had c-axis preferred orientation and smaller lattice mismatch. The influence of alpha(Cu) and the sputtering power on the blue band was investigated. (C) 2007 Published by Elsevier B.V.

引用

页码：297 / 300

页数：4

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