Analyse of Indium loss in preparation of CuInSe2 Films for solar cells

被引:0
作者
Sha Lai [1 ]
Wang Yanlai [1 ]
Ban Shiliang [1 ]
机构
[1] Inner Mongolia Univ, Key Lab Semicond Photovolta Technol, Univ Inner Mongolia Autonomous Reg, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China
来源
ENVIRONMENTAL BIOTECHNOLOGY AND MATERIALS ENGINEERING, PTS 1-3 | 2011年 / 183-185卷
关键词
Cu-In precursor films; ultrasonic electrodeposition; selenization; indium loss; In2Se;
D O I
10.4028/www.scientific.net/AMR.183-185.1837
中图分类号
Q81 [生物工程学(生物技术)]; Q93 [微生物学];
学科分类号
071005 ; 0836 ; 090102 ; 100705 ;
摘要
CuInSe2 thin films were obtained by selenization of the Cu-In precursors in the atmosphere of Se vapour, which were prepared on stainless steel and titanium substrates by electrodeposition. The films were characterized by XRD, scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The respective influences of composition, phases and surface morphology of Cu-In precursors on indium loss were investigated. The results indicate that the indium loss occurs in selenization process because of volatile ln(2)Se arising. The indium loss is less in selenization process of Cu-In precursors contained Culn, Cu2In and In phases.
引用
收藏
页码:1837 / 1841
页数:5
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