Study of Model Assisted Rule Base SRAF for Random Contact

被引：1

作者：

Moon, James ^{[1
]}

Nam, Byoung-Sub ^{[1
]}

Kim, Cheol-Kyun ^{[1
]}

Yun, Hyong-Sun ^{[1
]}

Lee, Ji-Young ^{[2
]}

Yim, Donggyu ^{[1
]}

Park, Sung-Ki ^{[1
]}

机构：

[1] Hynix Semicond Inc, Memory Res & Dev Div, San 136-1 Ami Ri, Icheon Si 467701, Kyungki Do, South Korea

[2] Mentor Graph Corp, Seoul 135729, South Korea

来源：

OPTICAL MICROLITHOGRAPHY XXIV | 2011年 / 7973卷

关键词：

Photo Lithography; Mask; OPC; RET; SRAF; ILT; CONTACT;

D O I：

10.1117/12.879201

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, we will evaluate model assisted rule base SRAF. Model assisted rule base SRAF combines the advantage of both model based SRAF and rule base SRAF to ensure high process margin without the mask making difficulty with stable wafer output. Model will assist in generating a common rule for rule based SRAF. Method to extract the rule from the models will first be discussed. Model assisted rule based SRAF will be applied to 3Xnm DRAM contact. Evaluation and analysis of the simulated and actual wafer result will be discussed. Our wafer result showed that by applying Model assisted rule based SRAF showed nearly equal performance to models based SRAF with clearly better stability and mask fabrication feasibility.

引用

页数：9