Electron spin resonance spectroscopy with femtoliter detection volume

被引:38
|
作者
Ranjan, V. [1 ]
Probst, S. [1 ]
Albanese, B. [1 ]
Schenkel, T. [2 ]
Vion, D. [1 ]
Esteve, D. [1 ]
Morton, J. J. L. [3 ]
Bertet, P. [1 ]
机构
[1] Univ Paris Saclay, CNRS, Quantron Grp, SPEC,CEA,CEA Saclay, F-91191 Gif Sur Yvette, France
[2] Lawrence Berkeley Natl Lab, Accelerator Technol & Appl Phys Div, Berkeley, CA 94720 USA
[3] UCL, London Ctr Nanotechnol, London WC1H 0AH, England
基金
欧洲研究理事会; 英国工程与自然科学研究理事会;
关键词
MAGNETIC-RESONANCE; SILICON; SENSITIVITY;
D O I
10.1063/5.0004322
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report electron spin resonance measurements of donors in silicon at millikelvin temperatures using a superconducting LC planar micro-resonator and a Josephson parametric amplifier. The resonator includes a nanowire inductor, defining a femtoliter detection volume. Due to strain in the substrate, the donor resonance lines are heavily broadened. Single-spin to photon coupling strengths up to similar to 3 kHz are observed. The single shot sensitivity is 120 +/- 24 spins/Hahn echo, corresponding to similar to 12 +/- 3 spins /root Hz for repeated acquisition.
引用
收藏
页数:5
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