Lithography of 180nm design rule for 1 Gbit DRAM

被引：7

作者：

Nam, D ^{[1
]}

Lee, J ^{[1
]}

Kim, C ^{[1
]}

Choi, S ^{[1
]}

Kang, H ^{[1
]}

Moon, J ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Ctr, Kyungki Do 449900, South Korea

来源：

OPTICAL MICROLITHOGRAPHY XI | 1998年 / 3334卷

关键词：

OAI; KrF; CD amplification factor; positive PR process; negative PR process;

D O I：

10.1117/12.310727

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical lithography is the most fundamental technology for the development of 1Gbit DRAM device. As a current status, KrF lithography is a powerful candidate for 180nm generation because of relatively high cost of ArF lithography and its untimely applicability to mass production. In this paper, we showed that the optimized OAI system with large quadrupole offset and small opening could improve the resolution and process margin in the photo process of 180nm level DRAM devices. We also demonstrated what the effect of CD amplification factor(cr) was related to the mask CD control and resist tone under the optimized OAI system. The result shows that the combination of the optimized OAI system and positive tone resist can give rise to the reduction of or from 4.5 to almost 1 and provide a reasonable margin.

引用

页码：117 / 123

页数：3