Metalorganic vapor phase epitaxy growth and photoluminescence properties of cubic AlxGa1-xN

被引：17

作者：

Wu, J

Yaguchi, H

Onabe, K

Shiraki, Y

机构：

[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, RCAST, Meguro Ku, Tokyo 1538904, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 02期

关键词：

D O I：

10.1063/1.121752

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown cubic AlxGa1-xN (0<x<0.25) films on GaAs (100) substrates by metalorganic vapor phase epitaxy. A strong excitonic transition, as well as a donor-acceptor pair transition and a deep-level emission, was observed in the photoluminescence spectra at 5 K in all the samples. With increasing Al fraction, all the emission lines shift to higher energy, nevertheless, with different shift rates. The temperature-dependent photoluminescence spectra show that the behavior of the donor-acceptor pair transition varied with Al fraction; at higher Al concentrations, the donor-acceptor pair transition tends to transform to a free-electron to acceptor transition and survive even at room temperature. This can also explain the energy shift to higher energy with increasing temperature for this emission line. (C) 1998 American Institute of Physics.

引用

页码：193 / 195

页数：3

共 19 条

[1] The near band edge photoluminescence of cubic GaN epilayers [J].

As, DJ ;

Schmilgus, F ;

Wang, C ;

Schottker, B ;

Schikora, D ;

Lischka, K .

APPLIED PHYSICS LETTERS, 1997, 70 (10) :1311-1313

[2] SURFACE RECONSTRUCTIONS OF ZINCBLENDE GAN/GAAS(001) IN PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY [J].

BRANDT, O ;

YANG, H ;

JENICHEN, B ;

SUZUKI, Y ;

DAWERITZ, L ;

PLOOG, KH .

PHYSICAL REVIEW B, 1995, 52 (04) :R2253-R2256

[3] Exciton spectra of cubic and hexagonal GaN epitaxial films [J].

Chichibu, S ;

Okumura, H ;

Nakamura, S ;

Feuillet, G ;

Azuhata, T ;

Sota, T ;

Yoshida, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (3B) :1976-1983

[4] FREE-TO-BOUND AND BOUND-TO-BOUND TRANSITIONS IN CDS [J].

COLBOW, K .

PHYSICAL REVIEW, 1966, 141 (02) :742-&

[5] HOT-ELECTRON MICROWAVE CONDUCTIVITY OF WIDE BANDGAP SEMICONDUCTORS [J].

DAS, P ;

FERRY, DK .

SOLID-STATE ELECTRONICS, 1976, 19 (10) :851-855

[6] DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN [J].

DINGLE, R ;

ILEGEMS, M .

SOLID STATE COMMUNICATIONS, 1971, 9 (03) :175-&

[7] ON P-TYPE DOPING IN GAN-ACCEPTOR BINDING-ENERGIES [J].

FISCHER, S ;

WETZEL, C ;

HALLER, EE ;

MEYER, BK .

APPLIED PHYSICS LETTERS, 1995, 67 (09) :1298-1300

[8] GROWTH AND PROPERTIES OF GAXAL1-XN COMPOUNDS [J].

HAGEN, J ;

METCALFE, RD ;

WICKENDEN, D ;

CLARK, W .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (04) :L143-L146

[9] CATHODOLUMINESCENCE PROPERTIES OF UNDOPED AND ZN-DOPED ALXGA1-XN GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

ITOH, K ;

AMANO, H ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (08) :1604-1608

[10] EFFECT OF ALN BUFFER LAYER ON ALGAN/ALPHA-AL2O3 HETEROEPITAXIAL GROWTH BY METALORGANIC VAPOR-PHASE EPITAXY [J].

KOIDE, Y ;

ITOH, N ;

ITOH, K ;

SAWAKI, N ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (07) :1156-1161

← 1 2 →