Resistance switching at the interface of LaAlO3/SrTiO3

被引：40

作者：

Chen, Y. Z. ^{[1
]}

Zhao, J. L. ^{[2
,3
]}

Sun, J. R. ^{[2
,3
]}

Pryds, N. ^{[1
]}

Shen, B. G. ^{[2
,3
]}

机构：

[1] Tech Univ Denmark, Fuel Cells & Solid State Chem Div, Riso Natl Lab Sustainable Energy, DK-4000 Roskilde, Denmark

[2] Chinese Acad Sci, State Key Lab Magnetism, Inst Phys, Beijing 100190, Peoples R China

[3] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 12期

基金：

中国国家自然科学基金;

关键词：

atomic force microscopy; electrical resistivity; interface phenomena; interface states; lanthanum compounds; strontium compounds; switching; thin films; ELECTRON GASES; TRANSITION; SRTIO3;

D O I：

10.1063/1.3490646

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

At the interface of LaAlO3/SrTiO3 with film thickness of 3 unit cells or greater, a reproducible electric-field-induced bipolar resistance switching of the interfacial conduction is observed on nanometer scale by a biased conducting atomic force microscopy under vacuum environment. The switching behavior is suggested to be an intrinsic feature of the SrTiO3 single crystal substrates, which mainly originates from the modulation of oxygen ion transfer in SrTiO3 surface by external electric field in the vicinity of interface, whereas the LaAlO3 film acts as a barrier layer. (C) 2010 American Institute of Physics. [doi:10.1063/1.3490646]

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