Status of SiC bulk growth processes

被引：28

作者：

Chaussende, D.

Wellmann, P. J.

Pons, M.

机构：

[1] INPGrenoble, CNRS, Mat & Genie Phys Lab, F-38016 Grenoble 1, France

[2] Univ Erlangen Nurnberg, Dept Mat 6, D-91058 Erlangen, Germany

[3] UJF, CNRS, INPGrenoble, F-38402 St Martin Dheres, France

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2007年 / 40卷 / 20期

关键词：

D O I：

10.1088/0022-3727/40/20/S02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The present paper gives an overview of the different routes to grow SiC single crystals. The focus is put on the new emerging processes compared with the well established ones. A review of the process engineering modelling is given. Finally, some selected results are pointed out as they should be considered for the future development of SiC material.

引用

页码：6150 / 6158

页数：9

共 92 条

[11] Control of the supersaturation in the CF-PVT process for the growth of silicon carbide crystals: Research and applications [J].

Chaussende, D ;

Ucar, M ;

Auvray, L ;

Baillet, F ;

Pons, M ;

Madar, R .

CRYSTAL GROWTH & DESIGN, 2005, 5 (04) :1539-1544

[12] Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method [J].

Chaussende, D ;

Balloud, C ;

Auvray, L ;

Baillet, F ;

Zielinski, M ;

Juillaguet, S ;

Mermoux, M ;

Pernot, E ;

Camassel, J ;

Pons, M ;

Madar, R .

SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 :91-94

[13] Thermodynamic aspects of the growth of SiC single crystals using the CF-PVT process [J].

Chaussende, Didier ;

Blanquet, Elisabeth ;

Baillet, Francis ;

Ucar, Magali ;

Chichignoud, Guy .

CHEMICAL VAPOR DEPOSITION, 2006, 12 (8-9) :541-548

[14] GROWTH OF SIC AND SIC-ALN SOLID-SOLUTION BY CONTAINER-FREE LIQUID-PHASE EPITAXY [J].

DMITRIEV, V ;

CHERENKOV, A .

JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) :343-348

[15] Modeling analysis of temperature field and species transport inside the system for sublimation growth of SiC in tantalum container [J].

Egorov, YE ;

Galyukov, AO ;

Gurevich, SG ;

Makarov, YN ;

Mokhov, EN ;

Ramm, MG ;

Ramm, MS ;

Roenkov, AD ;

Segal, AS ;

Vodakov, YA ;

Vorob'ev, AN ;

Zhmakin, AI .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :61-64

[16] Growth of cubic silicon carbide crystals from solution [J].

Eid, J. ;

Santailler, J. L. ;

Ferrand, B. ;

Ferret, P. ;

Pesenti, J. ;

Basset, A. ;

Passero, A. ;

Mantzari, A. ;

Polychroniadis, E. K. ;

Balloud, C. ;

Soares, P. ;

Camassel, J. .

SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 :123-126

[17] SiC crystal growth by HTCVD [J].

Ellison, A ;

Magnusson, B ;

Sundqvist, B ;

Pozina, G ;

Bergman, JP ;

Janzén, E ;

Vehanen, A .

SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 :9-14

[18]

Elwell D., 1975, CRYSTAL GROWTH HIGH

[19] Top-seeded solution growth of bulk SiC:: Search for fast growth regimes [J].

Epelbaum, BM ;

Hofmann, D ;

Müller, M ;

Winnacker, A .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :107-110

[20] On the mechanisms of micropipe and macrodefect transformation in SiC during liquid phase treatment [J].

Epelbaum, BM ;

Hofmann, D .

JOURNAL OF CRYSTAL GROWTH, 2001, 225 (01) :1-5

← 1 2 3 4 5 6 7 8 9 10 →