Status of SiC bulk growth processes

被引：28

作者：

Chaussende, D.

Wellmann, P. J.

Pons, M.

机构：

[1] INPGrenoble, CNRS, Mat & Genie Phys Lab, F-38016 Grenoble 1, France

[2] Univ Erlangen Nurnberg, Dept Mat 6, D-91058 Erlangen, Germany

[3] UJF, CNRS, INPGrenoble, F-38402 St Martin Dheres, France

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2007年 / 40卷 / 20期

关键词：

D O I：

10.1088/0022-3727/40/20/S02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The present paper gives an overview of the different routes to grow SiC single crystals. The focus is put on the new emerging processes compared with the well established ones. A review of the process engineering modelling is given. Finally, some selected results are pointed out as they should be considered for the future development of SiC material.

引用

页码：6150 / 6158

页数：9

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