Robust photoluminescence energy of MoS2/graphene heterostructure against electron irradiation

被引：9

作者：

Hong, Shengzhe ^{[1
]}

Fu, Deyi ^{[2
]}

Hou, Jiwei ^{[1
]}

Zhou, Duanliang ^{[3
,4
]}

Wang, Bolun ^{[1
]}

Sun, Yufei ^{[1
]}

Liu, Peng ^{[3
,4
]}

Liu, Kai ^{[1
]}

机构：

[1] Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

[2] Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117551, Singapore

[3] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

[4] Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China

来源：

SCIENCE CHINA-MATERIALS | 2018年 / 61卷 / 10期

基金：

中国国家自然科学基金;

关键词：

PHOTOCURRENT GENERATION; MOS2; GRAPHENE; TRANSITION;

D O I：

10.1007/s40843-018-9255-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1351 / 1359

页数：9

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