The phonon-assisted photon-drag effect in a two-dimensional semiconductor quantum-well structure

被引：4

作者：

Rodrigues, C ^{[1
]}

Fonseca, ALA ^{[1
]}

Agrello, DA ^{[1
]}

Nunes, OAC ^{[1
]}

机构：

[1] Univ Brasilia, Inst Phys, BR-70919970 Brasilia, DF, Brazil

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2001年 / 29卷 / 01期

关键词：

quantum wells; electronic states; heterostructures; phonons; electronic transport;

D O I：

10.1006/spmi.2000.0909

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The phonon-assisted photon-drag effect in a two-dimensional semiconductor quantum well structure is investigated. By making use of second-order perturbation theory and the classical Boltzmann equation we found, by considering both intrasubband and the intersubband electronic transitions, that the electric field generated by the photon-drag effect in a typical GaAs-AlGaAs two-dimensional system is enhanced by almost one order of magnitude as compared with that of a bulk system. Moreover, the results can qualitatively account for the observed absorption spectra due to intersubband electronic transitions occurring in GaAs quantum wells. (C) 2001 Academic Press.

引用

页码：33 / 42

页数：10

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