Synthesis of Ga-riched zinc gallate nanowires by reactive evaporation and the cathodoluminescence properties of individual nanowires

被引：3

作者：

Du, Yinxiao ^{[1
]}

Li, Guang-Cheng ^{[1
]}

机构：

[1] Zhengzhou Inst Aeronaut Ind Management, Dept Math & Phys, Zhengzhou 450015, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2010年 / 45卷 / 09期

关键词：

Nanostructures; Semiconductors; Vapor deposition; Luminescence; ZNGA2O4; NANOWIRES; PHOTOLUMINESCENCE; PHOSPHOR; LUMINESCENCE; GA2O3/ZNO;

D O I：

10.1016/j.materresbull.2010.06.027

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A facile Au-catalytic reactive evaporation method was developed to synthesize cubic zinc gallate (ZnGa2O4) nanowires through the reaction of Ga2O3 film and ZnO vapor at high temperature. The ZnGa2O4 nanowires are well crystalline and the length is up to tens of micrometers. The growth process follows typical vapor-liquid-solid (VLS) mechanism. All the cathodoluminescence (CL) spectra of individual nanowires reveal a strong, broad and asymmetric blue emission band centered at ca. 460 nm. It is thought that the excess Ga3+ is the main reason for the unusual blue emission properties. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1092 / 1095

页数：4