Modified transmission-line method for contact resistance extraction in organic field-effect transistors

被引：97
作者：
Xu, Yong [1 ]
Gwoziecki, R. [2 ]
Chartier, I. [2 ]
Coppard, R. [2 ]
Balestra, F. [1 ]
Ghibaudo, G. [1 ]
机构：
[1] MINATEC, INP Grenoble, IMEP LAHC, F-38016 Grenoble, France
[2] LITEN CEA, F-38052 Grenoble, France
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 06期
关键词：
contact resistance; error analysis; organic field effect transistors; regression analysis; transmission line matrix methods; THIN-FILM TRANSISTORS;
D O I：
10.1063/1.3479476
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A modified transmission-line method (TLM) for organic transistors contact resistance extraction is proposed. It is shown that the issues of conventional TLM reside in the channel resistance scattering due to parameter variations. These difficulties are overcome in the modified TLM, in which the linear regression slope is directly controlled by the contact resistance rather than by the channel resistance as in conventional TLM. Much smaller transistor-to-transistor dispersion of contact resistance results in a more stable and more reliable extraction method. Moreover, an error study by simulation has been carried out, confirming the greater accuracy of the modified TLM. (C) 2010 American Institute of Physics. [doi:10.1063/1.3479476]
引用
收藏
页数：3
相关论文
共 14 条
  • [1] An experimental study of contact effects in organic thin film transistors
    Gundlach, D. J.
    Zhou, L.
    Nichols, J. A.
    Jackson, T. N.
    Necliudov, P. V.
    Shur, M. S.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (02)
  • [2] Numerical simulations of contact resistance in organic thin-film transistors
    Hill, IG
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (16) : 1 - 3
  • [3] Organic thin film transistors: From theory to real devices
    Horowitz, G
    [J]. JOURNAL OF MATERIALS RESEARCH, 2004, 19 (07) : 1946 - 1962
  • [4] Structure-performance relationship in pentacene/Al2O3 thin-film transistors
    Kalb, W
    Lang, P
    Mottaghi, M
    Aubin, H
    Horowitz, G
    Wuttig, M
    [J]. SYNTHETIC METALS, 2004, 146 (03) : 279 - 282
  • [5] Contact resistance in organic thin film transistors
    Klauk, H
    Schmid, G
    Radlik, W
    Weber, W
    Zhou, LS
    Sheraw, CD
    Nichols, JA
    Jackson, TN
    [J]. SOLID-STATE ELECTRONICS, 2003, 47 (02) : 297 - 301
  • [6] AN EXPERIMENTAL-STUDY OF THE SOURCE DRAIN PARASITIC RESISTANCE EFFECTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS
    LUAN, SW
    NEUDECK, GW
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (02) : 766 - 772
  • [7] Charge injection process in organic field-effect transistors
    Minari, Takeo
    Miyadera, Tetsuhiko
    Tsukagoshi, Kazuhito
    Aoyagi, Yoshinobu
    Ito, Hiromi
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (05)
  • [8] Contact resistance extraction in pentacene thin film transistors
    Necliudov, PV
    Shur, MS
    Gundlach, DJ
    Jackson, TN
    [J]. SOLID-STATE ELECTRONICS, 2003, 47 (02) : 259 - 262
  • [9] Surface potential profiling and contact resistance measurements on operating pentacene thin-film transistors by Kelvin probe force microscopy
    Puntambekar, KP
    Pesavento, PV
    Frisbie, CD
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (26) : 5539 - 5541
  • [10] Detailed Characterization of Contact Resistance, Gate-Bias-Dependent Field-Effect Mobility, and Short-Channel Effects with Microscale Elastomeric Single-Crystal Field-Effect Transistors
    Reese, Colin
    Bao, Zhenan
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (05) : 763 - 771
12