A new technology process for packaged millimeter-wave Si-IMPATT diodes

被引：1

作者：

Luschas, M ^{[1
]}

Wollitzer, M ^{[1
]}

Luy, JF ^{[1
]}

机构：

[1] Tech Univ Hamburg Harburg, Arbeitsbereich Hochfrequenztech, D-2100 Hamburg, Germany

来源：

2000 25TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES CONFERENCE DIGEST | 2000年

关键词：

D O I：

10.1109/ICIMW.2000.893039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a technology process which integrates a diode and its housing in a packaged millimeter-wave Si-IMPATT device. The housing consists of a high resistivity Si substrate, on which the MBE layer is grown. An etch stop in KOH is the key step in the process. The device is thermocompression bonded in a single step onto a diamond heat sink, unlike the three step bonding for conventional diodes with quartz ring housing.

引用

页码：295 / 296

页数：2

共 3 条

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CSEPREGI, L ;

HEUBERGER, A ;

BAUMGARTEL, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (11) :3612-3626

[2] D-band Si-IMPATT diodes with 300 mW CW output power at 140 GHz [J].

Wollitzer, M ;

Buechler, J ;

Schaffler, F ;

Luy, JF .

ELECTRONICS LETTERS, 1996, 32 (02) :122-123

[3]

WOLLITZER M, 1998, FORTSCHRITT BERICHTE, V286

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