Thermo-optical modulation at lambda=1.5 mu m in an alpha-SiC-alpha-Si-alpha-SiC planar guided-wave structure

被引：7

作者：

Cocorullo, G ^{[1
]}

Corte, FGD ^{[1
]}

Rendina, I ^{[1
]}

Rubino, A ^{[1
]}

Terzini, E ^{[1
]}

机构：

[1] ENEA,CTR RIC PORTICI,I-80055 PORTICI,NAPLES,ITALY

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 07期

关键词：

D O I：

10.1109/68.502264

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A planar waveguide based on an amorphous silicon-amorphous silicon carbide heterostructure is proposed for the realization of passive and active optical components at the wavelengths lambda = 1.3-1.5 mu m. The waveguide has been realized by low temperature plasma enhanced chemical vapor deposition and is compatible with the standard microelectronic technologies, Thermo-optical induced modulation at lambda = 1.5 mu m is demonstrated in this waveguide, Numerical simulations predict that operation frequencies of about 3 MHz are possible, The measurements have also allowed the determination of the previously unknown thermo-optical coefficient of undoped amorphous silicon at this wavelength.

引用

页码：900 / 902

页数：3