Higher-Order Topological Insulators in Quasicrystals

被引:199
作者
Chen, Rui [1 ]
Chen, Chui-Zhen [2 ,3 ]
Gao, Jin-Hua [4 ,5 ]
Zhou, Bin [1 ]
Xu, Dong-Hui [1 ]
机构
[1] Hubei Univ, Dept Phys, Wuhan 430062, Peoples R China
[2] Soochow Univ, Inst Adv Study, Suzhou 215006, Peoples R China
[3] Soochow Univ, Sch Phys Sci & Technol, Suzhou 215006, Peoples R China
[4] Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Peoples R China
[5] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China
关键词
Quasicrystals - Topological insulators - Crystalline materials - Quantum theory - Topology;
D O I
10.1103/PhysRevLett.124.036803
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Current understanding of higher-order topological insulators (HOTIs) is based primarily on crystalline materials. Here, we propose that HOTIs can be realized in quasicrystals. Specifically, we show that two distinct types of second-order topological insulators (SOTIs) can be constructed on the quasicrystalline lattices (QLs) with different tiling patterns. One is derived by using a Wilson mass term to gap out the edge states of the quantum spin Hall insulator on QLs. The other is the quasicrystalline quadrupole insulator (QI) with a quantized quadrupole moment. We reveal some unusual features of the corner states (CSs) in the quasicrystalline SOTIs. We also show that the quasicrystalline QI can be simulated by a designed electrical circuit, where the CSs can be identified by measuring the impedance resonance peak. Our findings not only extend the concept of HOTIs into quasicrystals but also provide a feasible way to detect the topological property of quasicrystals in experiments.
引用
收藏
页数:6
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