Application of laser testing in study of SEE mechanisms in 16-Mbit DRAMs

被引：12
作者：
Duzellier, S [1 ]
Falguère, D
Guibert, L
Pouget, V
Fouillat, P
Ecoffet, R
机构：
[1] DESP, ONERA, F-31055 Toulouse, France
[2] Univ Bordeaux 1, IXL Lab, F-33405 Talence, France
[3] Ctr Natl Etud Spatiales, French Space Agcy, F-31055 Toulouse, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 06期
关键词：
D O I：
10.1109/23.903782
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A laser experiment has been carried out on the SMJ416400 and LUNA-E 16Mbit DRAMs in order to identify the mechanism leading to severe row/column errors. The error signatures observed with heavy ions are reproduced, related to physical locations on the die and the conditions of occurrence are studied (temporal behavior..,). The question of laser to ion equivalence is discussed.
引用
收藏
页码：2392 / 2399
页数：8
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