Highly uniform 1.5 μm wavelength deeply etched semiconductor/benzocyclobutene distributed Bragg reflector lasers

被引：3
|
作者：
Raj, MM [1 ]
Wiedmann, J [1 ]
Saka, Y [1 ]
Ebihara, K [1 ]
Arai, S [1 ]
机构：
[1] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2000年 / 39卷 / 12B期
关键词：
DBR lasers; CH4/H-2-reactive ion etching; benzocyclobutene;
D O I：
10.1143/JJAP.39.L1297
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The lasing performance of deeply etched distributed Bragg reflector (DBR) lasers was improved to a threshold current as low as 7.2 mA and a differential quantum efficiency as high as 50% with high uniformity. The reflectivity of the 15-DBR reflector was estimated to be as high as 95% from the threshold current dependence on the active region length. A preliminary test under room-temperature CW operation showed stable operation for a duration in excess of 4000 hours.
引用
收藏
页码：L1297 / L1299
页数：3
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