Pulsed laser deposition of ZnSxSe1-x and CdSxSe1-x thin films on quartz:: Measurements of energy gap, absorption coefficient and refractive index

被引：4

作者：

Ambrico, M ^{[1
]}

Stagno, V ^{[1
]}

Smaldone, D ^{[1
]}

Martino, R ^{[1
]}

Perna, G ^{[1
]}

Capozzi, V ^{[1
]}

机构：

[1] CNR, Ist Mat Speciali, I-85050 Tito Scalo, PZ, Italy

来源：

ALT '97 INTERNATIONAL CONFERENCE ON LASER SURFACE PROCESSING | 1998年 / 3404卷

关键词：

laser ablation; II-VI compounds; semiconductors;

D O I：

10.1117/12.308654

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ZnSxSe1-x and CdSxSe1-x thin films have been successfully deposited in optimized conditions on quartz by ablating stoichiometric cold pressed targets. From X-ray diffraction analysis the interplanar distance d for cubic ZnSxSe1-x and the c-axis value for hexagonal CdSxSe1-x thin films as a function of Sulfur concentration (x) have been been calculated. From room transmittance and reflectance measurements the energy gap modulation, the absorption coefficient and the real part of the refractive index were calculated and compared with those of the corresponding bulk alloys. The analytical dependence of the energy gap and the reticular parameters d and c vs the x-value have been also deduced.

引用

页码：39 / 46

页数：8