Advances in SiGe HBT BiCMOS technology

被引：0

作者：

Joseph, A ^{[1
]}

Lanzerotti, L ^{[1
]}

Liu, X ^{[1
]}

Sheridan, D ^{[1
]}

Johnson, J ^{[1
]}

Liu, Q ^{[1
]}

Dunn, J ^{[1
]}

Rieh, JS ^{[1
]}

Harame, D ^{[1
]}

机构：

[1] IBM Corp, Microelect Div, Semicond Res & Dev Ctr, Essex Jct, VT 05452 USA

来源：

2004 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2004年

关键词：

SiGeHBT; bipolar; BiCMOS technologies;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) BiCMOS technology has established a strong foothold in the communication marketplace by offering a cost competitive solution for myriad of products. SiGe BiCMOS technologies currently address various applications ranging from 0.9 - 77 GHz. At the heart of this success is the ease of integration of a high performance SiGe HBT with the state-of-the-art CMOS and passive elements. Here, we present the advances in SiGe BiCMOS technologies and an outlook of future challenges and opportunities.

引用

页码：1 / 4

页数：4

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