Advances in SiGe HBT BiCMOS technology

被引：0
|
作者：
Joseph, A [1 ]
Lanzerotti, L [1 ]
Liu, X [1 ]
Sheridan, D [1 ]
Johnson, J [1 ]
Liu, Q [1 ]
Dunn, J [1 ]
Rieh, JS [1 ]
Harame, D [1 ]
机构：
[1] IBM Corp, Microelect Div, Semicond Res & Dev Ctr, Essex Jct, VT 05452 USA
来源：
2004 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2004年
关键词：
SiGeHBT; bipolar; BiCMOS technologies;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) BiCMOS technology has established a strong foothold in the communication marketplace by offering a cost competitive solution for myriad of products. SiGe BiCMOS technologies currently address various applications ranging from 0.9 - 77 GHz. At the heart of this success is the ease of integration of a high performance SiGe HBT with the state-of-the-art CMOS and passive elements. Here, we present the advances in SiGe BiCMOS technologies and an outlook of future challenges and opportunities.
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页码：1 / 4
页数：4
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