Enhanced thermoelectric performance of Sn-doped Cu3SbS4

被引:63
作者
Chen, Kan [1 ]
Di Paola, Cono [2 ]
Du, Baoli [3 ]
Zhang, Ruizhi [1 ]
Laricchia, Savio [2 ]
Bonini, Nicola [2 ]
Weber, Cedric [2 ]
Abrahams, Isaac [4 ]
Yan, Haixue [1 ]
Reece, Mike [1 ]
机构
[1] Queen Mary Univ London, Sch Engn & Mat Sci, Mile End Rd, London E1 4NS, England
[2] Kings Coll London, Dept Phys, London WC2R 2LS, England
[3] Henan Polytech Univ, Sch Phys & Elect Informat Engn, Jiaozuo 454000, Peoples R China
[4] Queen Mary Univ London, Sch Biol & Chem Sci, Mile End Rd, London E1 4NS, England
基金
英国工程与自然科学研究理事会;
关键词
TRANSMISSION ELECTRON-MICROSCOPY; CRYSTAL-STRUCTURE; THERMAL-CONDUCTIVITY; BULK THERMOELECTRICS; PHONON-SCATTERING; TRANSITION; BOUNDARIES; CU2ZNSNS4; COMPOUND;
D O I
10.1039/c8tc02481b
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cu3SbS4 is an earth-abundant and low-cost alternative thermoelectric material for medium temperature applications. Tin doping into Cu3SbS4 yields materials with high thermoelectric performance. The electronic structure of Sn-doped Cu3SbS4 was studied using both hybrid density functional theory (DFT) and the quasi-particle self-consistent GW (QSGW) approach. A synthesis method involving mechanical alloying (MA) and spark plasma sintering (SPS) was employed to produce dense and single phase Cu3SbS4 samples with very fine grain size. Previously unreported nano-scale twins on {112} planes were observed by transmission electron microscopy (TEM). All of the samples showed very low lattice thermal conductivity, which is attributed to their microstructures. Sn was found to substitute Sb successfully in Cu3SbS4 and work effectively as an acceptor dopant, leading to an enhanced power factor. A maximum zT value of 0.72 at 623 K was achieved in Cu3Sb1-xSnxS4 (x = 0.05), which is comparable to the Se analogue Cu3SbSe4.
引用
收藏
页码:8546 / 8552
页数:7
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