A Graphite-Like Zero Gap Semiconductor with an Interlayer Separation of 2.8 A

被引：20

作者：

Baskey, Moni ^{[1
]}

Saha, Shyamal K. ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Dept Mat Sci, Kolkata 700032, India

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 12期

关键词：

graphene; zero gap; semiconductors; re-stacking; multilayered structure; GRAPHENE; EXFOLIATION;

D O I：

10.1002/adma.201104717

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The synthesis of a highly crystalline graphite-like new material with an interlayer separation of 2.8 Å is demonstrated by re-stacking GO sheets in the form of a thin film. The optical absorption spectra and electrical data indicate that the new crystal phase is an indirect zero gap semiconductor. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1589 / 1593

页数：5

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