Multipeak negative-differential-resistance device by combining single-electron and metal-oxide-semiconductor transistors

被引：45
|
作者：
Inokawa, H [1 ]
Fujiwara, A [1 ]
Takahashi, Y [1 ]
机构：
[1] Nippon Telegraph & Tel Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 22期
关键词：
D O I：
10.1063/1.1421085
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A multipeak negative-differential-resistance device is proposed. The device comprises a single-electron transistor (SET) and a metal-oxide-semiconductor field-effect transistor (MOSFET), and can, in principle, generate an infinite number of current peaks. Operation of the proposed device is verified at 27 K with a SET fabricated by the pattern-dependent oxidation process and a MOSFET on the same silicon-on-insulator wafer. Six current peaks and a peak-to-valley current ratio of 2.1 are obtained, and multiple-valued memory operation is successfully demonstrated. (C) 2001 American Institute of Physics.
引用
收藏
页码：3618 / 3620
页数：3
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