Multipeak negative-differential-resistance device by combining single-electron and metal-oxide-semiconductor transistors

被引：45

作者：

Inokawa, H ^{[1
]}

Fujiwara, A ^{[1
]}

Takahashi, Y ^{[1
]}

机构：

[1] Nippon Telegraph & Tel Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 22期

关键词：

D O I：

10.1063/1.1421085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A multipeak negative-differential-resistance device is proposed. The device comprises a single-electron transistor (SET) and a metal-oxide-semiconductor field-effect transistor (MOSFET), and can, in principle, generate an infinite number of current peaks. Operation of the proposed device is verified at 27 K with a SET fabricated by the pattern-dependent oxidation process and a MOSFET on the same silicon-on-insulator wafer. Six current peaks and a peak-to-valley current ratio of 2.1 are obtained, and multiple-valued memory operation is successfully demonstrated. (C) 2001 American Institute of Physics.

引用

页码：3618 / 3620

页数：3

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