Electroluminescence from the fluorine-plasma treated Ni/Au-AlGaN/GaN Schottky diode

被引：0

作者：

Li, B. K. ^{[1
]}

Wang, M. J. ^{[2
]}

Chen, K. J. ^{[2
]}

Wang, J. N. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

Schottky diode; electroluminescence; Fermi level depinning; ENHANCEMENT-MODE; HEMTS;

D O I：

10.1063/1.3666282

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of fluorine-plasma (F-plasma) treatment on current-voltage and electroluminescence (EL) characteristics of Ni/Au-AlGaN/GaN Schottky diode were investigated. It was found that the EL spectrum was dominated by the GaN near bandedge emissions with a rather small turn on current for EL emission. We propose that the F-related deep centers induced by the F-plasma treatment assist the hole injection processes through hopping conduction.

引用

页数：2

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