Resistive Switching Effect Enhanced by Illumination in Ag/GeO2/FTO Device

被引：2
|
作者：
Sun, Bai [1 ,2 ]
Liu, Yonghong [1 ]
Wu, Jinggao [2 ]
Chen, Peng [1 ]
机构：
[1] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
[2] Southwest Univ, ICEAM, Chongqing 400715, Peoples R China
来源：
NANOSCIENCE AND NANOTECHNOLOGY LETTERS | 2015年 / 7卷 / 05期
关键词：
GeO2; Resistive Switching; Illumination; White-Light; Memory; MEMORY DEVICES; GEO2; NANOWIRES; MEMRISTOR; PHOTOLUMINESCENCE; DEPOSITION; RESISTANCE; CATALYST; SYSTEM;
D O I：
10.1166/nnl.2015.1962
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The resistive switching is an outstanding candidate for next-generation nonvolatile random-access memory device. In this work, resistive switching effect of Ag/GeO2/FTO device is demonstrated. In particular, the resistive switching characteristics can be enhanced by illumination. The device can maintain superior reversible stability over 100 cycles with an OFF/ON-state resistance ratio of about 103 under illumination at room temperature. This study is useful for exploring the promising light-controlled resistive switching device.
引用
收藏
页码：406 / 410
页数：5
相关论文
共 50 条
  • [1] Resistive switching effect of Ag/MoS2/FTO device
    Sun, Bai
    Zhao, Wenxi
    Liu, Yonghong
    Chen, Peng
    FUNCTIONAL MATERIALS LETTERS, 2015, 8 (01)
  • [2] An optoelectronic resistive switching memory behavior of Ag/α-SnWO4/FTO device
    Han, Pengde
    Sun, Bai
    Cheng, Sen
    Yu, Fangli
    Jiao, Baoxiang
    Wu, Qisheng
    JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 681 : 516 - 521
  • [3] Effect of visible-light illumination on resistive switching characteristics in Ag/Ce2W3O12/FTO devices
    Sun, Bai
    Li, Xiaoping
    Liang, Dandan
    Chen, Peng
    CHEMICAL PHYSICS LETTERS, 2016, 643 : 66 - 70
  • [4] Investigation of physically transient resistive switching memory based on GeO2 thin films
    Feng, Julin
    Hu, Wei
    Zeng, Fanju
    Lin, Hao
    Li, Liye
    Yang, Ben
    Peng, Yao
    Wu, Daofu
    Huo, Benjun
    Tang, Xiaosheng
    APPLIED PHYSICS LETTERS, 2020, 117 (19)
  • [5] MEMORY SWITCHING IN GEO2 FILMS
    KHAN, MI
    HOGARTH, CA
    KHAN, MN
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 46 (02) : 215 - 216
  • [6] Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device
    Liu, Lifeng
    Yu, Di
    Ma, Wenjia
    Chen, Bing
    Zhang, Feifei
    Gao, Bin
    Kang, Jinfeng
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (02)
  • [7] The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO2/FTO Memory Device
    Yu, Zhiqiang
    Han, Xu
    Xu, Jiamin
    Chen, Cheng
    Qu, Xinru
    Liu, Baosheng
    Sun, Zijun
    Sun, Tangyou
    SENSORS, 2023, 23 (07)
  • [8] Forming Free Resistive Switching Characteristics of Cu/MoS2/FTO Device
    Abbas, Yawar
    Rezeq, Moh'd
    Saadat, Irfan
    Hussain, Sajjad
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2019, 14 (10) : 1374 - 1381
  • [9] Effects of magnetic field on resistive switching in multiferroic based Ag/BiFeO3/FTO RRAM device
    Jena, A. K.
    Sahoo, Ajit Kumar
    Mohanty, J.
    APPLIED PHYSICS LETTERS, 2020, 116 (09)
  • [10] Flexible resistive switching memory devices composed of solution-processed GeO2:S films
    Chung, Isaac
    Cho, Kyoungah
    Yun, Junggwon
    Kim, Sangsig
    MICROELECTRONIC ENGINEERING, 2012, 97 : 122 - 125
12345