Improved Performance for Half-Bridge Cells With a Parallel Presspack Diode

被引：10

作者：

Hohmann, Fabian ^{[1
]}

Bakran, Mark-M. ^{[1
]}

机构：

[1] Univ Bayreuth, Dept Mechatron, Ctr Energy Technol, D-95447 Bayreuth, Germany

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2019年 / 34卷 / 04期

关键词：

HVDC transmission; modular multilevel converter; power semiconductor devices;

D O I：

10.1109/TPEL.2018.2849848

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an IGBT half-bridge with a parallel presspack diode for increased efficiency is investigated. The switching performance and its losses are discussed with respect to its operation in a modular multilevel converter.

引用

页码：3091 / 3097

页数：7

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