Improved Performance for Half-Bridge Cells With a Parallel Presspack Diode

被引：10
作者：
Hohmann, Fabian [1 ]
Bakran, Mark-M. [1 ]
机构：
[1] Univ Bayreuth, Dept Mechatron, Ctr Energy Technol, D-95447 Bayreuth, Germany
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 2019年 / 34卷 / 04期
关键词：
HVDC transmission; modular multilevel converter; power semiconductor devices;
D O I：
10.1109/TPEL.2018.2849848
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, an IGBT half-bridge with a parallel presspack diode for increased efficiency is investigated. The switching performance and its losses are discussed with respect to its operation in a modular multilevel converter.
引用
收藏
页码：3091 / 3097
页数：7
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