Point defect creation by low fluence swift heavy ion irradiation-induced low energy electrons in YBa2Cu3O7-y

被引:19
作者
Biswal, R. [1 ]
John, J. [2 ]
Behera, D. [3 ]
Mallick, P. [4 ]
Kumar, Sandeep [5 ]
Kanjilal, D. [5 ]
Mohanty, T. [6 ]
Raychaudhuri, P. [2 ]
Mishra, N. C. [1 ]
机构
[1] Utkal Univ, Dept Phys, Bhubaneswar 751004, Orissa, India
[2] Tata Inst Fundamental Res, Mumbai 400005, Maharashtra, India
[3] Natl Inst Technol, Dept Phys, Rourkela 769008, India
[4] N Orissa Univ, Dept Phys, Baripada 757003, India
[5] Inter Univ Accelerator Ctr, New Delhi 110067, India
[6] Jawaharlal Nehru Univ, Sch Phys Sci, New Delhi 110067, India
关键词
D O I
10.1088/0953-2048/21/8/085016
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of 200 MeV Ag ion irradiation on the superconducting and normal state properties of the high-T(c) superconductor YBa(2)Cu(3)O(7-y) (YBCO) is studied by in situ temperature-dependent resistance measurements. We show that irradiating YBCO thin films (similar to 150 nm) at low temperature result in a softly defected region of about 85 nm radius due to swift heavy ion-induced secondary electrons around the highly amorphized latent tracks of similar to 5 nm radius. This leads to a decrease of T(c) at fluences three orders of magnitude less than the threshold fluence, where overlapping of tracks block the supercurrent path. Due to their low energy (4.1 keV for 200 MeV Ag ions), the secondary electrons can induce point defects by inelastic processes rather than by direct elastic collision.
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页数:6
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