A 28 GHz Single-Input Linear Chireix (SILC) Power Amplifier in 130 nm SiGe Technology

被引:25
作者
Rabet, Bagher [1 ,2 ]
Asbeck, Peter M. [1 ]
机构
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
[2] Apple Inc, San Diego, CA 92121 USA
关键词
Impedance; Gain; Radio frequency; Modulation; Predistortion; Distortion; Linearity; 5G mobile communication; BiCMOS integrated circuits; millimeter wave (mm-wave) integrated circuits; power amplifiers (PAs); EFFICIENCY; PMOS;
D O I
10.1109/JSSC.2020.2967542
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article presents an integrated high-efficiency 28 GHz power amplifier (PA) employing a combination of Chireix outphasing and Doherty architectures in order to simultaneously achieve power back-off efficiency and linearity with a single RF input signal and no predistortion. The amplifier consists of a dual-input high-efficiency outphasing PA and a simple input network which serves as a power splitter and feeds the same signal to the inputs of the main and auxiliary PA cells that are biased in class-AB and class-C regions, respectively, similar to the Doherty architecture. The operation of the PA cells together with the Chireix combiner result in back-off efficiency enhancement plus systematic AM-AM and AM-PM variations which are used to correct the distortions caused by transistors, resulting in a linear response. The implemented PA demonstrates 19 dBm saturation power (Psat) with 34.4% peak power-added efficiency (PAE) and 6 dB back-off PAE of >23% at 27.5 GHz. The modulated signal performance using a 100 MHz 64QAM OFDM signal shows an average output power of 11.9 dBm with PAE >20%, EVM < 5%, and ACLR < -33 dBc without using predistortion.
引用
收藏
页码:1482 / 1490
页数:9
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