Testing of planar hydrogenated amorphous silicon sensors with charge selective contacts for the construction of 3D-detectors

被引：8

作者：

Menichelli, M. ^{[1
]}

Bizzarri, M. ^{[1
,2
]}

Boscardin, M. ^{[3
,4
]}

Caprai, M. ^{[1
]}

Caricato, A. P. ^{[5
,6
]}

Cirrone, G. A. P. ^{[7
]}

Crivellari, M. ^{[4
]}

Cupparo, I ^{[8
,9
]}

Cuttone, G. ^{[7
]}

Dunand, S. ^{[10
]}

Fano, L. ^{[1
,2
]}

Hammad, O. ^{[4
]}

Ionica, M. ^{[1
]}

Kanxheri, K. ^{[1
]}

Large, M. ^{[12
]}

Maruccio, G. ^{[5
,6
]}

Monteduro, A. G. ^{[5
,6
]}

Morozzi, A. ^{[1
]}

Moscatelli, F. ^{[1
,11
]}

Papi, A. ^{[1
]}

Passeri, D. ^{[1
,13
]}

Petasecca, M. ^{[12
]}

Petringa, G. ^{[7
]}

Quarta, G. ^{[5
,6
]}

Rizzato, S. ^{[5
,6
]}

Rossi, A. ^{[1
,2
]}

Rossi, G. ^{[1
]}

Scorzoni, A. ^{[1
,13
]}

Servoli, L. ^{[1
]}

Talamonti, C. ^{[8
,9
]}

Verzellesi, G. ^{[3
,14
]}

Wyrsch, N. ^{[10
]}

机构：

[1] Ist Nazl Fis Nucl, Sez Perugia, Via Pascoli Snc, I-06123 Perugia, Italy

[2] Univ Perugia, Dip Fis & Geol, Via Pascoli Snc, I-06123 Perugia, Italy

[3] Ist Nazl Fis Nucl, TIPFA, Via Sommar 14, I-38123 Povo, TN, Italy

[4] Fdn Bruno Kessler, Via Sommar 18, I-38123 Povo, TN, Italy

[5] Ist Nazl Fis Nucl, Sez Lecce, Via Arnesano, I-73100 Lecce, Italy

[6] Univ Salento, Dept Math & Phys Ennio de Giorgi, Via Arnesano, I-73100 Lecce, Italy

[7] Ist Nazl Fis Nucl, Lab Nazl Sud, Via S Sofia 62, I-95123 Catania, Italy

[8] Ist Nazl Fis Nucl, Sez Firenze, Viale Morgagni 50, I-50135 Florence, FI, Italy

[9] Dipartimento Fis Sci Biomed Sperimentali & Clin, Viale Morgagni 50, I-50135 Florence, FI, Italy

[10] Ecole Polytech Fed Lausanne EPFL, Photovolta & Thin Film Elect Lab PV Lab, Rue Maladiere 71b, CH-2000 Neuchatel, Switzerland

[11] CNR IOM, Via Pascoli Snc, I-06123 Perugia, Italy

[12] Univ Wollongong, Ctr Med Radiat Phys, Northfields Ave, Wollongong, NSW 2522, Australia

[13] Univ Perugia, Dip Ingn, Via G Duranti, I-06125 Perugia, Italy

[14] Univ Modena & Reggio Emilia, Dip Sci & Metodi Ingn, Via Amendola 2, I-42122 Reggio Emilia, Italy

来源：

JOURNAL OF INSTRUMENTATION | 2022年 / 17卷 / 03期

关键词：

Radiation-hard detectors; Solid state detectors; FIELD SIZE; ENERGY;

D O I：

10.1088/1748-0221/17/03/C03033

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Hydrogenated Amorphous Silicon (a-Si:H) is a well known material for its intrinsic radiation hardness and is primarily utilized in solar cells as well as for particle detection and dosimetry. Planar p-i-n diode detectors are fabricated entirely by means of intrinsic and doped PECVD of a mixture of Silane (SiH4) and molecular hydrogen. In order to develop 3D detector geometries using a-Si:H, two options for the junction fabrication have been considered: ion implantation and charge selective contacts through atomic layer deposition. In order to test the functionality of the charge selective contact electrodes, planar detectors have been fabricated utilizing this technique. In this paper, we provide a general overview of the 3D fabrication project followed by the results of leakage current measurements and X-ray dosimetric tests performed on planar diodes containing charge selective contacts to investigate the feasibility of the charge selective contact methodology for integration with the proposed 3D detector architectures.

引用

页数：13

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