Effect of nano-SiC doping on the superconducting critical parameters in MgB2/Fe wires and tapes

被引：5

作者：

Gajda, D. ^{[1
]}

Zaleski, A. J. ^{[2
]}

Morawski, A. ^{[3
]}

Kario, A. ^{[3
]}

机构：

[1] Int Lab High Magnet Fields & Low Temp, PL-53421 Wroclaw, Poland

[2] Polish Acad Sci, Inst Low Temp & Struct Res, PL-50422 Wroclaw, Poland

[3] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland

来源：

ACTA PHYSICA POLONICA A | 2008年 / 113卷 / 01期

关键词：

D O I：

10.12693/APhysPolA.113.371

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper the results of critical current measurements for MgB2 wires and tapes in iron sheath with and without nano-SiC doping are presented. We focus on power-in-tube processing technique, using both in situ and ex situ methods. In situ MgB2 wires and tapes were fabricated from MgH2 and B or Mg and B powders. The methods such as hydrostatic extrusion and rolling were used. The samples were annealed under high Ar gas pressure (hot isostatic pressing) at 750 degrees C and 1.0 GPa for 40 min. It was found that critical current of MgB2/Fe superconducting wire or tape with nano-SiC dopant increased in higher magnetic field values in comparison to pure MgB2. A significant difference of J(c) in tapes made by in situ way from MgH2 and Mg were found.

引用

页码：371 / 374

页数：4

共 4 条

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