Effect of hydrogen passivation on polycrystalline silicon thin films

被引：28
作者：
Honda, S
Mates, T
Ledinsky, M
Oswald, J
Fejfar, A
Kocka, J
Yamazaki, T
Uraoka, Y
Fuyuki, T
机构：
[1] Acad Sci Czech Republ, Inst Phys, Prague 16253 6, Czech Republic
[2] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan
来源：
THIN SOLID FILMS | 2005年 / 487卷 / 1-2期
关键词：
hydrogen passivation; polycrystalline silicon; photoluminescence; Raman spectroscopy; Si-H-2; bonding; hydrogen molecules;
D O I：
10.1016/j.tsf.2005.01.056
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hydrogen passivation is essential for improving the properties of polycrystalline silicon thin films, We have observed that remote plasma hydrogenation with duration up to 30 min effectively passivated the defects and improved the Hall mobility. trap density and photoluminescence intensity. Over 60 min of hydrogenation caused the photoluminescence intensity to decrease, It seems that excessive hydrogenation not only passivated defects but also created new defects (Si H-2 bonds and hydrogen molecule,.,) in the grains. Raman spectroscopy detected that hydrogen formed Si-H-2 bonds in the poly-Si up to 100 nm from surface, Creation of these defects corresponded to a decrease of the photoluminescence intensity. These defects might be harmful to poly-Si-based devices, (C) 2005 Elsevier B.V. All rights reserved.
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收藏
页码：152 / 156
页数：5
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