Phase Transition and Electrical Properties of Gallium- and Indium-Doped Bi10Ti3W3O30

被引：2
|
作者：
Kharitonova, E. P. [1 ]
Belov, D. A. [1 ]
Mosunov, A. V. [2 ]
Voronkova, V. I. [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Moscow 119991, Russia
[2] Russian State Sci Ctr, Karpov Inst Phys Chem, Moscow 105064, Russia
来源：
INORGANIC MATERIALS | 2011年 / 47卷 / 05期
关键词：
Differential Scanning Calorimetry; Differential Scanning Calorimetry Curve; Ferroelectric Phase Transition; Differential Scanning Calorimetry Data; Aurivillius Phase;
D O I：
10.1134/S0020168511050116
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline samples of gallium- and indium-doped Bi10Ti3W3O30 (mixed-layer Aurivillius phase with the Ti4+ and W6+ distributed at random over the perovskite-like slabs) have been prepared by solid-state reactions, and their polymorphism and electrical properties have been studied. Doping with both In3+ and Ga3+ yields limited solid solutions and shifts the ferroelectric phase transition to lower temperatures. The heterovalent substitutions of In3+ and Ga3+ for Ti4+ and W6+ increase the oxygen vacancy concentration and, accordingly, the conductivity of the material relative to the undoped compound.
引用
收藏
页码：513 / 520
页数：8
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