Phase Transition and Electrical Properties of Gallium- and Indium-Doped Bi10Ti3W3O30

被引：2

作者：

Kharitonova, E. P. ^{[1
]}

Belov, D. A. ^{[1
]}

Mosunov, A. V. ^{[2
]}

Voronkova, V. I. ^{[1
]}

机构：

[1] Moscow MV Lomonosov State Univ, Moscow 119991, Russia

[2] Russian State Sci Ctr, Karpov Inst Phys Chem, Moscow 105064, Russia

来源：

INORGANIC MATERIALS | 2011年 / 47卷 / 05期

关键词：

Differential Scanning Calorimetry; Differential Scanning Calorimetry Curve; Ferroelectric Phase Transition; Differential Scanning Calorimetry Data; Aurivillius Phase;

D O I：

10.1134/S0020168511050116

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline samples of gallium- and indium-doped Bi10Ti3W3O30 (mixed-layer Aurivillius phase with the Ti4+ and W6+ distributed at random over the perovskite-like slabs) have been prepared by solid-state reactions, and their polymorphism and electrical properties have been studied. Doping with both In3+ and Ga3+ yields limited solid solutions and shifts the ferroelectric phase transition to lower temperatures. The heterovalent substitutions of In3+ and Ga3+ for Ti4+ and W6+ increase the oxygen vacancy concentration and, accordingly, the conductivity of the material relative to the undoped compound.

引用

页码：513 / 520

页数：8

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