Intrinsic population inversion in biased multiband superlattices

被引:9
|
作者
Kleinert, P
Bryksin, VV
机构
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1103/PhysRevB.63.193303
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electric field induced carrier redistribution in multiband superlattices is studied within an equation of motion analysis of the density matrix. Semiclassical intrasubband and quantum-mechanical tunneling contributions are identified. It is shown that there is no global population inversion for superlattices with only two minibands. However, we predict that an intrinsic global population inversion may occur at particular electric field strengths in superlattices with at least three minibands. Conditions under which global population inversion is expected to emerge are discussed. It is proposed to exploit the global population inversion that may appear due to resonant tunneling into a wide third miniband to fabricate unipolar midinfrared semiconductor lasers without any injector regions.
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页数:4
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