Electronic and optical properties on non-polar InGaN/GaN quantum-well structures

被引：0

作者：

Park, S. H. ^{[1
]}

Kim, D. ^{[1
]}

Kim, H. M. ^{[1
]}

Lee, Y. T. ^{[2
]}

机构：

[1] Catholic Univ Daegu, Dept Elect Engn, Kyongsan 712702, Kyongbuk, South Korea

[2] Gwangju Inst Sci & Technol, Dept Informat & Commun, Gwangju 500712, South Korea

来源：

2007 INTERNATIONAL WORKSHOP ON OPTOELECTRONIC PHYSICS AND TECHNOLOGY | 2007年

关键词：

GaN; InGaN; quantum well; non-polar; piezoelectric polarization; spontaneoous polarization;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electronic and optical properties of non-polar (11 (2) over bar0) a-(phi=O), (10 (1) over bar0) m-plane (phi-pi/6), and (112 (2) over bar)-oriented wurtzite (WZ) InGaN/GaN quantum well (QW) structures are investigated using the multiband effective-mass theory. These results are compared with those of (0001)-oriented WZ InGaN/GaN QW structures. The internal field becomes zero for (112 (2) over bar) crystal orientation near the crystal angle of theta=56 degrees, in addition to a- and m-plane with theta=90 degrees irrespective of the In composition in the well. This is because the sum of the piezoelectric and spontaneous polarizations in the barrier is equal to that in the well. The optical gain of QW structures with non-polar crystal orientation is significantly larger than that of the (0001)-oriented QW. This is caused mainly by the increase of the optical matrix element due to the disappearance of the internal field. Also, the (112 (2) over bar)-oriented QW is found to have the optical gain comparable to the a- or m-plane QW. In addition, their optical matrix element show strong in-plane anisotropy. The bandgap transition wavelength of the QW structure with the m-plane is found to be longer than that of the QW structures with the a-plane.

引用

页码：50 / +

页数：2

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