Fracture of SnBi/Ni(P) interfaces

被引:14
作者
Liu, PL [1 ]
Shang, JK [1 ]
机构
[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
关键词
D O I
10.1557/JMR.2005.0115
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Fracture resistance of the interface between electroless Ni(P) and the eutectic SnBi solder alloy was examined in the as-reflowed and aged conditions, to investigate the potential role of Ni in inhibiting interfacial segregation of Bi in SnBi-Cu interconnect. In the as-reflowed condition, the fracture resistance of the SnBi/Ni(P) interface was about the same as that of the SnBi/Cu interface. Upon aging at 120 degrees C for 7 days the fracture resistance of the SnBi/Ni(P) interface was much higher than that of the SnBi/Cu interface. Such a difference was shown to result from the difference in fracture mechanism as the crack remained along the solder-intermetallic interface in the aged SnBi-Ni interconnect but propagated along the intermetallic-substrate interface in the aged SnBi-Cu interconnect. While fracture of the intermetallic-substrate interface in SnBi-Cu interconnect was due to Bi segregation onto that interface, no Bi was detected at the intermetallic-substrate interface in SnBi-Ni interconnects, implying that Ni(P) was effective in inhibiting the interfacial segregation of Bi.
引用
收藏
页码:818 / 826
页数:9
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