Synthesis, characterization and UV photodetector application of Sb-doped ZnO nanowires

被引：8

作者：

Yao, Zhengrong ^{[1
,2
]}

Tang, Kun ^{[1
]}

Xu, Yang ^{[1
]}

Du, Qianqian ^{[1
]}

Li, Jing ^{[1
]}

Hao, Licai ^{[1
]}

Shen, Yang ^{[1
]}

Zhu, Shunming ^{[1
]}

Gu, Shulin ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210046, Peoples R China

[2] China Pharmaceut Univ, Sch Sci, Nanjing 211198, Peoples R China

来源：

JOURNAL OF LUMINESCENCE | 2020年 / 221卷

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/j.jlumin.2019.117025

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Sb-doped ZnO nanowires with hexagonal wurtzite structures have been synthesized via chemical vapor deposition method, and the main charge state of Sb dopants is Sb5+. The photoluminescence spectra demonstrate the existence of shallow acceptors, Sb-Zn-2V(Zn) complexes in all probability. On the other hand, Sb doping caused more native and impurity donors in Sb-doped ZnO nanowires. Then, field effect transistors of single Sb-doped ZnO nanowire were fabricated and the transport properties shows n-type conductivity. The competition between shallow acceptors and donors, and the influence of Sb valency need to be investigated further to obtain stable Sb-doped p-type ZnO. At last, we have shown the potential application of Sb-doped ZnO nanowires for nanoscale UV photodetector.

引用

页数：6

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