Silicoboron-carbonitride ceramics: A class of high-temperature, dopable electronic materials

被引：114

作者：

Ramakrishnan, PA

Wang, YT

Balzar, D

An, LA

Haluschka, C

Riedel, R

Hermann, AM ^{[1
]}

机构：

[1] Univ Colorado, Dept Phys, Boulder, CO 80309 USA

[2] Tech Univ Darmstadt, Fachbereich Mat Wissensch, Fachgebiet Disperse Festoffe, D-64287 Darmstadt, Germany

[3] Univ Colorado, Dept Mech Engn, Boulder, CO 80309 USA

[4] NIST, Mat Sci & Engn Lab, Boulder, CO 80303 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 20期

关键词：

D O I：

10.1063/1.1370540

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structure and electronic properties of polymer-derived silicoboron-carbonitride ceramics are reported. Structural analysis using radial-distribution-function formalism showed that the local structure is comprised of Si tetrahedra with B, C, and N at the corners. Boron doping of SiCN leads to enhanced p-type conductivity (0.1 Ohm (-1) cm(-1) at room temperature). The conductivity variation with temperature for both SiCN and SiBCN ceramics shows Mott's variable range hopping behavior in these materials, characteristic of a highly defective semiconductor. The SiBCN ceramic has a low, positive value of thermopower, which is probably due to a compensation mechanism. (C) 2001 American Institute of Physics.

引用

页码：3076 / 3078

页数：3

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