Microstructural influences on stress migration in electroplated Cu metallization

被引：33

作者：

Sekiguchi, A ^{[1
]}

Koike, J ^{[1
]}

Maruyama, K ^{[1
]}

机构：

[1] Tohoku Univ, Dept Mat Sci, Sendai, Miyagi 9808579, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 10期

关键词：

D O I：

10.1063/1.1609238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stress migration in advanced Cu interconnects leads to device failure and to poor production throughput. In this work, microstructural effects on stress-migration resistance were investigated in two types of electroplated Cu metallization having a <111> texture and a random texture. Transmission electron microscopy showed incoherent twins in the <111> textured films whereas coherent twins in the random textured films. The incoherent twins were found to accompany stress-induced voids because of a weak bonding at twin interfaces. Unlike conventional Al interconnects, a strong <111> texture should be avoided to minimize stress-migration failure in Cu interconnects. (C) 2003 American Institute of Physics.

引用

页码：1962 / 1964

页数：3

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