Preparation and characterization of nanostructured copper bismuth diselenide thin films from a chemical route

被引:6
作者
Bari, R. H. [1 ]
Patil, L. A. [1 ]
机构
[1] Pratap Coll, PG Dept Phys, Amalner 425401, India
关键词
Copper bismuth diselenide; thin films; chemical bath deposition; deposition parameters; TRANSPORT-PROPERTIES; DEPOSITION; GROWTH;
D O I
10.1007/s12034-011-0147-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of copper bismuth diselenide were prepared by chemical bath deposition technique onto glass substrate below 60 degrees C. The deposition parameters such as time, temperature of deposition and pH of the solution, were optimized. The set of films having different elemental compositions was prepared by varying Cu/Bi ratio from 0.13-1.74. Studies on structure, composition, morphology, optical absorption and electrical conductivity of the films were carried out and discussed. Characterization includes X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDAX), absorption spectroscopy, and electrical conductivity. The results are discussed and interpreted.
引用
收藏
页码:663 / 670
页数:8
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