Characterization of nanostructured photosensitive cadmium sulphide thin films grown by SILAR deposition technique

被引：35
作者：
Ubale, A. U. [1 ]
Bargal, A. N. [1 ]
机构：
[1] Govt Vidarbha Inst Sci & Humanities, Dept Phys, Thin Film Phys Lab, Amravati 444604, Maharashtra, India
来源：
INDIAN JOURNAL OF PHYSICS | 2010年 / 84卷 / 11期
关键词：
Thin films; nanostructure; electrical properties; optical properties; PHOTOCONDUCTING PROPERTIES; CHEMICAL-DEPOSITION; OPTICAL-PROPERTIES; CDS; BATH;
D O I：
10.1007/s12648-010-0140-x
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
This paper reports the preparation of photosensitive nanostructured CdS thin films by Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. To obtain good quality CdS thin films, preparative conditions such as concentration of cationic and anionic precursors, adsorption and rinsing time durations etc. are optimized. The structural, optical, and electrical characterizations of the as-deposited and annealed CdS thin films were carried out using X-ray diffraction, scanning electron microscopy, optical absorption and electrical resistivity methods. The photoconductivity studies showed that the annealed films are more than that photosensitive. The TEP measurement shows that deposited films are of n-type.
引用
收藏
页码：1497 / 1507
页数：11
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