Correlation between current-voltage and capacitance-voltage characteristics of schottky barrier diodes

被引：5

作者：

Zhu, Y ^{[1
]}

Ishimaru, Y ^{[1
]}

Takahashi, N ^{[1
]}

Shimizu, M ^{[1
]}

机构：

[1] Sharp Co Ltd, Cent Res Labs, Tenri, Nara 632, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 09期

关键词：

capacitance; correlation; current; metal-semiconductor devices; semiconductor device modeling;

D O I：

10.1109/16.711371

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A correlation between the current-voltage (I-Ir) and the capacitance-voltage (C-V) characteristics of Schottky barrier diodes (SBD's) is revealed and claimed to be a general property of SBD's for the first time. Analytical expressions explaining the correlation based on the electric field dependence of the Schottky barrier height are derived, yielding novel approaches to evaluate Schottky barrier height lowering and to model the device behaviors.

引用

收藏

页码：2032 / 2036

页数：5

相关论文

共 29 条

[1] INFLUENCE OF THIN INTERFACIAL SILICON-OXIDE LAYERS ON THE SCHOTTKY-BARRIER BEHAVIOR OF TI ON SI(100) [J].

ABOELFOTOH, MO .

PHYSICAL REVIEW B, 1989, 39 (08) :5070-5078

[2] AN ANALYTICAL MODEL FOR HIGH-ELECTRON-MOBILITY TRANSISTORS [J].

AHN, H ;

ELNOKALI, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (06) :874-878

[3] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].

ANDREWS, JM ;

LEPSELTER, MP .

SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+

[4] ROLE OF METAL-SEMICONDUCTOR INTERFACE IN SILICON INTEGRATED-CIRCUIT TECHNOLOGY [J].

ANDREWS, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :972-984

[5] EQUIVALENT-CIRCUIT PARAMETER EXTRACTION FOR COLD GAAS-MESFETS [J].

ANHOLT, R ;

SWIRHUN, S .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1991, 39 (07) :1243-1247

[6] RELATION BETWEEN CURRENT-VOLTAGE CHARACTERISTICS AND INTERFACE STATES AT METAL-SEMICONDUCTOR INTERFACES [J].

BARRET, C ;

MURET, P .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :890-892

[7] ANALYSIS OF I-V-MEASUREMENTS ON CRSI2-SI SCHOTTKY STRUCTURES IN A WIDE TEMPERATURE-RANGE [J].

BARUS, M ;

DONOVAL, D .

SOLID-STATE ELECTRONICS, 1993, 36 (07) :969-974

[8]

Box GEP, 1978, STAT EXPT

[9] CORRELATION BETWEEN CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE SCHOTTKY-BARRIER HEIGHT ON (100) AND (110) GAAS AND (110) INP SURFACES [J].

CHIN, VWL ;

GREEN, MA ;

STOREY, JWV .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) :3470-3474

[10] CHARACTERIZATION OF A DEFECT LAYER AT A SCHOTTKY-BARRIER INTERFACE BY CURRENT AND CAPACITANCE MEASUREMENTS [J].

COLA, A ;

LUPO, MG ;

VASANELLI, L ;

VALENTINI, A .

SOLID-STATE ELECTRONICS, 1993, 36 (05) :785-789