A Simple Leakage Current Model for Polycrystalline Silicon Nanowire Thin-Film Transistors

被引：0
作者：
He, Hongyu [1 ,2 ]
He, Jin [1 ,2 ]
Deng, Wanling [1 ,2 ]
Wang, Hao [1 ,2 ]
Hu, Yue [1 ,2 ]
Zhu, Xiaoan [3 ]
Zheng, Xueren [4 ]
机构：
[1] Peking Univ, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Hong Kong Inst, Shenzhen 518057, Peoples R China
[2] Peking Univ, Tera Scale Res Ctr, Inst Microelect, Sch Elect Engn & Comp Sci, Beijing 100871, Peoples R China
[3] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
[4] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China
来源：
2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2013年
关键词：
Thin-film transistor (TFT); polycrystalline silicon (poly-Si); nanowire; leakage current; thermal field emission; ANOMALOUS OFF-CURRENT; MOSFETS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple leakage current expression is presented for the polycrystalline silicon nanowire thin-film transistors. The thermal field emission mechanism is utilized to derive the expression. The model results are compared with the experimental data at different temperatures and voltages, and good agreements are obtained.
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页数：2
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